Samsung announced that it has begun mass producing chips using its most advanced chip production technology, the 3-nanometer (nm) process node.
The South Korean tech company said when compared to its 5nm process, the 3nm process used 45 percent less electricity, boosted performance by 23 percent, and had a 16 percent smaller surface area. Samsung’s 3nm process node uses GAA transistor architecure named Multi-Bridge-Channel FET (MBCFET), which packs bigger channels in gates for electricity to flow through while lowering the voltage level compared to the preceding FinFET transistor architecture.
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